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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6338/D High-Power NPN Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min) -- 2N6338 VCEO(sus) = 120 Vdc (Min) -- 2N6339 VCEO(sus) = 140 Vdc (Min) -- 2N6340 VCEO(sus) = 150 Vdc (Min) -- 2N6341 * High DC Current Gain -- hFE = 30 - 120 @ IC = 10 Adc hFE = 12 (Min) @ IC = 25 Adc * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc * Fast Switching Times @ IC = 10 Adc tr = 0.3 s (Max) ts = 1.0 s (Max) tf = 0.25 s (Max) * Complement to 2N6436-38 *MAXIMUM RATINGS Rating Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Peak Base Current 2N6338 2N6339 2N6340 2N6341* *Motorola Preferred Device 25 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS 200 WATTS PD, POWER DISSIPATION (WATTS) IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I II II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII III II I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III II I II II I IIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I I I IIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII III II I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III II I II II I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII III II I IIIIIIIIIIIIIIIIIIIIIII Symbol VCB VCEO VEB IC 2N6338 120 100 2N6339 140 120 2N6340 160 140 2N6341 180 150 Unit Vdc Vdc Vdc Adc Collector-Emitter Voltage 6.0 25 50 10 Total Device Dissipation @ TC = 25_C Derate above 25_C IB PD Adc 200 1.14 Watts W/C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 200 CASE 1-07 TO-204AA (TO-3) _C THERMAL CHARACTERISTICS Characteristic Symbol JC Max Unit Thermal Resistance, Junction to Case * Indicates JEDEC Registered Data. 0.875 _C/W 200 175 150 125 100 75 50 25 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N6338 2N6339 2N6340 2N6341 * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle (2) fT = |hfe| * ftest. *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) SWITCHING CHARACTERISTICS DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS NOTE: For information on Figures 3 and 6, RB and RC were varied to obtain desired test conditions. Fall Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) Storage Time (VCC 80 Vdc, IC = 10 Adc, IB1 = IB2 = 1.0 Adc) Rise Time (VCC 80 Vdc, IC = 10Adc, IB1 = 1.0 Adc, VBE(off) = 6.0 Vdc) Current-Gain -- Bandwidth Product (2) (IC = 1.0 Adc, VCE = 10 Vdc, ftest = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Base-Emitter On Voltage (IC = 10 Adc, VCE = 2.0 Vdc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) Collector Emitter Saturation Voltage (IC = 10 Adc, IB = 1.0 Adc) (IC = 25 Adc, IB = 2.5 Adc) DC Current Gain) (IC = 0.5 Adc, VCE = 2.0 Vdc) (IC = 10 Adc, VCE = 2.0 Vdc) (IC = 25 Adc, VCE = 2.0 Vdc) Emitter Cutoff Current (VBE = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCB = Rated VCB, IE = 0) Collector Cutoff Current (VCE = Rated VCEO, VEB(off) = 1.5 Vdc) (VCE = Rated VCEO, VEB(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) (VCE = 70 Vdc, IB = 0) (VCE = 75 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) 2 - 9.0 V t, TIME (ns) + 11 V 0 tr, tf 10 ns DUTY CYCLE = 1.0% Figure 2. Switching Time Test Circuit 10 s v v RB 10 OHMS 1N4933 Characteristic - 5.0 V VCC + 80 V v 2.0%. RC 8.0 OHMS SCOPE 1000 700 100 70 50 200 300 500 20 30 10 0.3 2N6338 2N6339 2N6340 2N6341 2N6338 2N6339 2N6340 2N6341 Motorola Bipolar Power Transistor Device Data 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) VCEO(sus) td @ VBE(off) = 6.0 V VCE(sat) VBE(sat) VBE(on) Symbol tr ICBO IEBO ICEO ICEX fT Cob hFE tr ts tf Min 100 120 140 150 40 50 30 12 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.25 Max VCC = 80 V IC/IB = 10 TJ = 25C -- 120 -- 300 100 1.0 0.3 1.8 1.8 2.5 1.0 1.8 10 1.0 10 50 50 50 50 -- -- -- -- -- Figure 3. Turn-On Time 20 Vdc Vdc Vdc Vdc pF s s s -- Adc mAdc Adc Adc Adc MHz Unit 30 2N6338 2N6339 2N6340 2N6341 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.1 0.05 0.02 0.01 SINGLE PULSE 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) t1 t2 P(pk) JC = r(t) JC JC = 0.875C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 50 100 200 300 500 1000 D = 0.5 0.2 DUTY CYCLE, D = t1/t2 10 20 30 Figure 4. Thermal Response 100 50 IC, COLLECTOR CURRENT (AMP) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 2.0 TJ = 200C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW 2N6338 2N6339 RATED VCEO 2N6340 2N6341 20 30 50 70 100 3.0 5.0 7.0 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 200 s dc 1.0 ms 5.0 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 200 Figure 5. Active Region Safe Operating Area 5.0 3.0 2.0 1.0 t, TIME ( s) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.3 tf ts VCC = 80 V IB1 = IB2 IC/IB = 10 TJ = 25C 5000 3000 2000 C, CAPACITANCE (pF) 1000 700 500 300 200 100 70 50 0.1 Cob Cib TJ = 25C 0.5 0.7 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMP) 20 30 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 6. Turn-Off Time Figure 7. Capacitance Motorola Bipolar Power Transistor Device Data 3 2N6338 2N6339 2N6340 2N6341 PACKAGE DIMENSIONS A N C -T- E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M -Y- H B -Q- 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *2N6338/D* 2N6338/D |
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